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C106 Series Preferred Devices …
Tags: anode, assignment 1, cathode, durability, economical prices, heat dissipation, high heat, high volume, pin assignment, preferred devices, reliability, remote control, rms, silicon, speed control, thermal resistance, uniformity, volts, warning systems,Pages: 6
Language: english
Created: Thu Aug 18 13:58:37 2005
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C106 Series
Preferred Devices
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer http://onsemi.com
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
SCRs
Features 4 A RMS, 200 - 600 Volts
· Glassivated Surface for Reliability and Uniformity
· Power Rated at Economical Prices
· Practical Level Triggering and Holding Characteristics G
· Flat, Rugged, Thermopad Construction for Low Thermal Resistance, A K
High Heat Dissipation and Durability
· Sensitive Gate Triggering
· Pb-Free Packages are Available*
TO-225AA
CASE 077
STYLE 2
MARKING DIAGRAM & PIN ASSIGNMENT
1. Cathode
YWW
2. Anode
C106xxG
3. Gate
Y = Year
WW = Work Week
C106xx = Device Code
xx = B, D, D1, M, M1
G = Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:
August, 2005 - Rev. 8 C106/D
C106 Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Max Unit
Peak Repetitive Off-State Voltage (Note 1) VDRM, V
(Sine Wave, 50-60 Hz, RGK = 1 kW, VRRM
TC = -40° to 110°C)
C106B 200
C106D, C106D1* 400
C106M, C106M1* 600
On-State RMS Current IT(RMS) 4.0 A
(180° Conduction Angles, TC = 80°C)
Average On-State Current IT(AV) 2.55 A
(180° Conduction Angles, TC = 80°C)
Peak Non-Repetitive Surge Current ITSM 20 A
(1/2 Cycle, Sine Wave, 60 Hz, TJ = +110°C)
Circuit Fusing Considerations (t = 8.3 ms) I2t 1.65 A2s
Forward Peak Gate Power PGM 0.5 W
(Pulse Width v1.0 msec, TC = 80°C)
Forward Average Gate Power PG(AV) 0.1 W
(Pulse Width v1.0 msec, TC = 80°C)
Forward Peak Gate Current IGM 0.2 A
(Pulse Width v1.0 msec, TC = 80°C)
Operating Junction Temperature Range TJ -40 to +110 °C
Storage Temperature Range Tstg -40 to +150 °C
Mounting Torque (Note 2) - 6.0 in. lb.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Case RqJC 3.0 °C/W
Thermal Resistance, Junction-to-Ambient RqJA 75 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds TL 260 °C
ORDERING INFORMATION
Device Package Shipping
C106B TO-225AA 500 Units / Box
C106BG TO-225AA 500 Units / Box
(Pb-Free)
C106D TO-225AA 500 Units / Box
C106DG TO-225AA 500 Units / Box
(Pb-Free)
C106D1* TO-225AA 500 Units / Box
C106D1G* TO-225AA 500 Units / Box
(Pb-Free)
C106M TO-225AA 500 Units / Box
C106MG TO-225AA 500 Units / Box
(Pb-Free)
C106M1* TO-225AA 500 Units / Box
C106M1G* TO-225AA 500 Units / Box
(Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix.
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C106 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current IDRM, IRRM
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms) TJ = 25°C - - 10 mA
TJ = 110°C - - 100 mA
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 3) VTM - - 2.2 V
(ITM = 4 A)
Gate Trigger Current (Continuous dc) (Note 4) IGT mA
(VAK = 6 Vdc, RL = 100 Ohms) TJ = 25°C - 15 200
TJ = -40°C - 35 500
Peak Reverse Gate Voltage (IGR = 10 mA) VGRM - - 6.0 V
Gate Trigger Voltage (Continuous dc) (Note 4) VGT V
(VAK = 6 Vdc, RL = 100 Ohms) TJ = 25°C 0.4 0.60 0.8
TJ = -40°C 0.5 0.75 1.0
Gate Non-Trigger Voltage (Continuous dc) (Note 4) VGD 0.2 - - V
(VAK = 12 V, RL = 100 Ohms, TJ = 110°C)
Latching Current IL mA
(VAK = 12 V, IG = 20 mA) TJ = 25°C - 0.20 5.0
TJ = -40°C - 0.35 7.0
Holding Current (VD = 12 Vdc) IH mA
(Initiating Current = 20 mA, Gate Open) TJ = 25°C - 0.19 3.0
TJ = -40°C - 0.33 6.0
TJ = +110°C - 0.07 2.0
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage dv/dt - 8.0 - V/ms
(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110°C)
3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
4. RGK is not included in measurement.
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter VTM
VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode -
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C106 Series
110 10
P(AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS)
JUNCTION TEMPERATURE 110°C
100
TC, CASE TEMPERATURE (° C)
90 8
DC HALF SINE WAVE
80
RESISTIVE OR INDUCTIVE LOAD
70 6 50 TO 400Hz.
60
DC
50 4
HALF SINE WAVE
40 RESISTIVE OR INDUCTIVE LOAD.
30 50 to 400 Hz 2
20
10 0
0 .4 .8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0 .4 .8 1.2 1.6 2.0 2.4 2.6 3.2 3.6 4.0
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES) IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
Figure 1. Average Current Derating Figure 2. Maximum On-State Power Dissipation
100 1000
IGT, GATE TRIGGER CURRENT (m A)
IH, HOLDING CURRENT (m A)
10 100
1 10
-40 -25 -10 5 20 35 50 65 80 95 110 -40 -25 -10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Current versus Figure 4. Typical Holding Current versus
Junction Temperature Junction Temperature
1.0 1000
0.9
VGT , GATE TRIGGER VOLTAGE (V)
I L , LATCHING CURRENT (m A)
0.8
0.7
0.6 100
0.5
0.4
0.3
0.2 10
-45 -25 -10 5 20 35 50 65 80 95 110 -40 -25 -10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Voltage versus Figure 6. Typical Latching Current versus
Junction Temperature Junction Temperature
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C106 Series
PACKAGE INTERCHANGEABILITY
The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with
competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it
compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for
mounting compatibility.
.400
____
.295
____ .360
.305 .115
____ .095 .127
____ .135
____ ____ DIA
.145
____ .130 .123 .026
____
.105 .115
.155 .019
.148
____
.158 .520
____
.425
____ 5_ TYP .480
.435
1 2 3 .385
____ .315
____
.365 .285
.050
____
.095 .575
____
.655 .420
____
.400
.105
____
.015
____ .105
____ .095
.040 .095 .190
____
.025
.094 BSC .054
____ .170
.045
____
.025
____ .055 .046
.035
.020
____
.026
ON Semiconductor C-106 Package Competitive C-106 Package
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C106 Series
PACKAGE DIMENSIONS
TO-225
CASE 77-09
ISSUE Z
-B- NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
U F C Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
M 077-09.
-A-
1 2 3 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
H C 0.095 0.105 2.42 2.66
K D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
V J K 0.575 0.655 14.61 16.63
G R M 5_ TYP 5 _ TYP
Q 0.148 0.158 3.76 4.01
S 0.25 (0.010) M A M B M R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
D 2 PL U 0.145 0.155 3.69 3.93
V 0.040 --- 1.02 ---
0.25 (0.010) M A M B M
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
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