






Philips Semiconductors Product specification
Rectifier diodes BYV29 series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
· Low forward volt drop VR = 300 V/ 400 V/ 500 V
· Fast switching
· Soft recovery characteristic k a VF 1.03 V
· High thermal cycling performance 1 2
· Low thermal resistance IF(AV) = 9 A
trr 60 ns
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
tab
intended for use as output rectifiers
in high frequency switched mode 1 cathode
power supplies.
2 anode
The BYV29 series is supplied in the
conventional leaded SOD59 tab cathode
(TO220AC) package.
1 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV29 -300 -400 -500
VRRM Peak repetitive reverse voltage - 300 400 500 V
VRWM Crest working reverse voltage - 300 400 500 V
VR Continuous reverse voltage - 300 400 500 V
IF(AV) Average forward current1 square wave; = 0.5; - 9 A
Tmb 123 °C
IFRM Repetitive peak forward current t = 25 µs; = 0.5; - 18 A
Tmb 123 °C
IFSM Non-repetitive peak forward t = 10 ms - 100 A
current. t = 8.3 ms - 110 A
sinusoidal; with reapplied
VRRM(max)
Tstg Storage temperature -40 150 °C
Tj Operating junction temperature - 150 °C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 2.5 K/W
mounting base
Rth j-a Thermal resistance junction to in free air. - 60 - K/W
ambient
1 Neglecting switching and reverse current losses.
September 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV29 series
ultrafast
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VF Forward voltage IF = 8 A; Tj = 150°C - 0.90 1.03 V
IF = 8 A - 1.05 1.25 V
IF = 20 A - 1.20 1.40 V
IR Reverse current VR = VRRM - 2.0 50 µA
VR = VRRM; Tj = 100 °C - 0.1 0.35 mA
Qs Reverse recovery charge IF = 2 A to VR 30 V; - 40 60 nC
dIF/dt = 20 A/µs
trr Reverse recovery time IF = 1 A to VR 30 V; - 50 60 ns
dIF/dt = 100 A/µs
Irrm Peak reverse recovery current IF = 10 A to VR 30 V; - 4.0 5.5 A
dIF/dt = 50 A/µs; Tj = 100°C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 2.5 - V
dI PF / W BYV29 Tmb(max) / C
I 15 112.5
F Vo = 0.8900 V
F Rs = 0.0190 Ohms
dt D = 1.0
0.5
t
rr 10 125
time 0.2
0.1
5 tp 137.5
I tp D=
Q 10% 100% T
s
I t
R I T
rrm 0 150
0 5 10 15
IF(AV) / A
Fig.1. Definition of trr, Qs and Irrm Fig.3. Maximum forward dissipation PF = f(IF(AV));
square wave where IF(AV) =IF(RMS) x D.
I PF / W BYV29 Tmb(max) / C
F 12 120
Vo = 0.89V
Rs = 0.019 Ohms a = 1.57
10 125
1.9
2.2
8 130
2.8
time 4
6 135
VF
4 140
V 2 145
fr
VF
0 150
0 2 4 6 8 10
time IF(AV) / A
Fig.2. Definition of Vfr Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
September 1998 2 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV29 series
ultrafast
trr / ns IF / A BYW29
1000 30
Tj=150 C
IF=10 A Tj=25 C
100 20
1A
typ max
10 10
Tj = 25 C
Tj = 100C
1 0
1 10 100 0 0.5 1 1.5 2
dIF/dt (A/us) VF / V
Fig.5. Maximum trr at Tj = 25°C and 100°C Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Irrm / A Qs / nC
10 1000
IF=10A
IF = 10 A
1 100
IF=1A
2A
0.1 10
Tj = 25 C
Tj = 100C
0.01
1
1 10 100 1.0 10 100
-dIF/dt (A/us) -dIF/dt (A/us)
Fig.6. Maximum Irrm at Tj = 25°C and 100°C. Fig.8. Maximum Qs at Tj = 25°C
Transient thermal impedance, Zth j-mb (K/W)
10
1
0.1
0.01 P tp tp
D D=
T
T t
0.001
1us 10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s) BYV29
Fig.9. Transient thermal impedance Zth j-mb= f(tp)
September 1998 3 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV29 series
ultrafast
MECHANICAL DATA
Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7
2,8 5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2
(2x) 0,9 max (2x)
0,6
5,08 2,4
Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998 4 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV29 series
ultrafast
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998 5 Rev 1.300